Amorphously deposited metal oxide ceramic films

Details Amorphously deposited metal oxide ceramic films Amorphously deposited metal oxide ceramic films

1998-06-30

2000-10-17

Elms, Richard

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438400, 438100, H01L 2100

Patent

active

061330515

ABSTRACT:
A metal oxide ceramic layer is formed from an amorphous film. The metal oxide ceramic layer comprises, for example, a Bi-based oxide ceramic, The amorphous Bi-based metal oxide layer is annealed to transformed it into a ferroelectric layer. A lower thermal budget is needed to transform the amorphous Bi-based metal oxide ceramic into the ferroelectric phase.

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