Amorphous thin film transistor device

Details Amorphous thin film transistor device Amorphous thin film transistor device

1986-07-23

1988-07-12

James, Andrew J.

357 2, 357 4, 357 234, 357 42, 357 59, H01L 2712, H01L 2904, H01L 2978

Patent

active

047573619

ABSTRACT:
A thin film transistor technology where a gate member on a substrate surface is in electric field influenceable proximity to active semiconductor devices in the direction normal to the substrate surface and the ohmic electrodes of the active device are parallel with the substrate surface. The gate is formed on the substrate and conformal coatings of insulator and semiconductor are provided over it. A metal is deposited from the direction normal to the surface that is thicker in the horizontal dimension than the vertical so as to be susceptible to an erosion operation such as a dip etch which separates the metal into self-aligned contact areas on each side of a semiconductor device channel without additional masking. Self-alignment of the source, drain and gate can be achieved by insulator additions above and under the gate fabricated without additional masking.

REFERENCES:
patent: 4422090 (1983-12-01), Shepherd et al.
patent: 4514253 (1985-04-01), Minezaki
patent: 4547789 (1985-10-01), Cannella
patent: 4554570 (1985-11-01), Jastrzebski et al.
patent: 4554572 (1985-11-01), Chatterjee
patent: 4566025 (1986-01-01), Jastrzebski et al.
Sze, "Physics of Semiconductor Devices", 2nd ed., Wiley & Sons, N.Y. 1982, pp. 291, 304-307.
Electron Device Letters, vol. EDL-5, No. 4, Apr. 1984, p. 105, "Proposed Vertical-Type Amorphous-Silicon Field-Effect Transistors", by Uchida et al.
Materials Research Society, Spring '85 Meeting, "Short Channel Amorphous Silicon MOS Structures with Reduced Capacitance." by Yaniv et al., Paper F3.6.
IBM Technical Disclosure Bulletin, vol. 29, No. 1, Jun. 1986, p. 343, "Short Channel FET Fabrication," by M. H. Brodsky.
IBM Technical Disclosure Bulletin, vol. 29, No. 5, Oct. 1986, p. 2224, "Thin Film Field Effect Transistor," by Bumble et al.

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