Amorphous thin film semiconductor device with active and inactiv

Details Amorphous thin film semiconductor device with active and inactiv Amorphous thin film semiconductor device with active and inactiv

1991-03-26

1992-09-22

Mintel, William

357 22, 357 237, 357 59, 357 32, 357 16, H01L 2714

Patent

active

051501813

ABSTRACT:
A film semiconductor device comprises at least active semiconductor layer, inactive semiconductor layer, ohmic layer and metal layer respectively laminated sequentially one after another on the substrate. Electrodes are formed by the ohmic layer and the metal layer.

REFERENCES:
patent: 4441113 (1984-04-01), Madan
patent: 4522663 (1985-06-01), Oushinsky et al.
patent: 4658280 (1987-04-01), Komatsu et al.
patent: 4886962 (1989-12-01), Gofuku et al.
K. Hiranoko et al., "Influence of an SiNx:H Gate Insulator on an Amorphous Silicon Thin-Film Transistor", J. of Applied Physics, vol. 62 (5), Sep. 1, 1987, pp. 2129-2134.
K. Hiranoko et al., "Effect of SiN.sub.x :H Layered Structures", J. of Applied Physics, vol. 10 (12), Dec. 15, 1986, pp. 4204-4208.

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