Amorphous switching device with residual crystallization retarda

Details Amorphous switching device with residual crystallization retarda Amorphous switching device with residual crystallization retarda

1981-04-06

1984-02-21

Larkins, William D.

357 71, H01L 4500

Patent

active

044333420

ABSTRACT:
A residual crystallization retardation layer is provided between the non-crystalline switchable semiconductor layer and each electrode structure. Amorphous germanium, silicon or carbon form good crystallization retardation layers and also minimize electromigration and reduce solubility of tellurium in the electrodes.

REFERENCES:
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patent: 4167806 (1979-09-01), Kumurdjian
patent: 4174521 (1979-11-01), Neale
patent: 4366614 (1983-01-01), Kumurdjian
Dargan et al., Int. J. Electronics, 1975, vol. 38, No. 6, pp. 711-727.
Grigorovici, "Structure of Amorphous Semicond.", pp. 214-215 of Electronic & Structural Properties of Amorphous Semicond. (Academic Press NY, 1973).

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