Amorphous solar cell

Batteries: thermoelectric and photoelectric – Photoelectric – Panel or array

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136258, 357 30, H01L 3106

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active

047371960

ABSTRACT:
An amorphous solar cell having a p-i-n (or n-i-p) structure, in which either or both of the p and n layers are of a double layer structure, including an amorphous semiconductor layer and a micro-crystalline semiconductor layer, wherein both layers are of the same conductivity type and the amorphous semiconductor layer is located at the side of the i layer.

REFERENCES:
patent: 4272641 (1981-06-01), Hanak
patent: 4498092 (1985-02-01), Yamazaki
patent: 4536607 (1985-08-01), Weismann
P. H. Fang et al., Appl. Phys. Lett., vol. 41, pp. 365-366 (1982).
Y. Hamakawa et al., "A New Type of Amorphous Silicon Photovoltaic Cell Generating More Than 2.0 V", Applied Physics Letters, vol. 35, pp. 187 to 189, 1979.

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