Amorphous silicon thin film transistor with a depletion gate

Details Amorphous silicon thin film transistor with a depletion gate Amorphous silicon thin film transistor with a depletion gate

1990-02-14

1991-10-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437101, 357 237, H01L 2978

Patent

active

050533479

ABSTRACT:
The present invention is a high speed thin film transistor with an accumulation gate and a depletion gate. When a positive voltage is applied to the accumulation gate, the electrons are accumulated in the channel region of the accumulation gate and the transistor is operated at the "on" state. If a negative voltage is applied to the depletion gate, the accumulated electrons are depleted, and the transistor is operated at the "off" state. The on-current of the thin film transistor is the same as the conventional thin film transistors; however, a smaller off-current of the transistor is obtained.

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