Liquid crystal cells – elements and systems – Particular structure – Having significant detail of cell structure only
Reexamination Certificate
2008-05-27
2008-05-27
Ngo, Huyen (Department: 2871)
Liquid crystal cells, elements and systems
Particular structure
Having significant detail of cell structure only
C349S151000, C349S043000, C345S204000
Reexamination Certificate
active
11177113
ABSTRACT:
In an amorphous silicon thin film transistor-liquid crystal display device and a method of manufacturing the same, gate patterns including a gate line and a gate electrode are formed on an insulation substrate having a display region and a driving circuit region on which a plurality of shift registers are formed, a gate insulating film, active layer patterns and data patterns including source and drain electrodes are formed successively on the substrate, a passivation layer on the substrate has a first contact hole exposing a drain electrode of the display region and second and third contact holes respectively exposing a gate electrode and source and drain electrodes of a first transistor of each of the shift registers, an electrode patterns on the passivation layer include a first electrode connected to the drain electrode of the display region through the first contact hole and a second electrode connecting the gate electrode to the source and drain electrodes of the first transistor through the second and third contact holes, and the gate driving circuit including the shift registers and the wirings are integrated on the insulating substrate without an additional process, thereby simplifying the manufacturing process.
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F. Chau & Associates LLC
Ngo Huyen
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