Amorphous-silicon thin film transistor array substrate

Details Amorphous-silicon thin film transistor array substrate Amorphous-silicon thin film transistor array substrate

1990-07-12

1991-09-10

Carroll, J.

Optical: systems and elements

Prism

With reflecting surface

357 2, 357 4, 357 45, 357 72, 359 59, H01L 4500, H01L 2712, H01L 2701, H01L 2348

Patent

active

050478192

ABSTRACT:
A reverse staggered amorphous silicon thin film transistor array substrate includes an array of amorphous silicon thin film transistors, gate wiring interconnecting the gate electrodes of the amorphous silicon thin film transistors, and source wirings. The transistor array is provided on a thin film transistor array substrate. A protective insulation layer and an amorphous silicon layer having a greater width than the source wiring are provided under the source wiring.

REFERENCES:
patent: 4582395 (1986-04-01), Morozumi
patent: 4705358 (1987-11-01), Yamazaki et al.
patent: 4816885 (1989-03-01), Yoshida et al.
patent: 4821092 (1989-04-01), Noguchi
patent: 4857907 (1989-08-01), Koden

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