Amorphous silicon thin film transistor and method of preparing s

Details Amorphous silicon thin film transistor and method of preparing s Amorphous silicon thin film transistor and method of preparing s

1996-05-24

1998-11-10

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 66, H01L 2904

Patent

active

058347968

ABSTRACT:
The disclosure relates to an amorphous silicon thin film transistor. The transistor includes a substrate, a gate electrode formed on the substrate, an insulating film formed on the substrate, a hydrogenated amorphous silicon film formed on the insulating film, a non-doped microcrystal silicon film formed on the amorphous silicon film; and source and drain electrodes which are formed on the microcrystal silicon film. In the transistor, there is provided an ohmic contact between the source and drain electrodes through the microcrystal silicon film. The insulating film optionally has an etched surface layer prepared by etching the insulating film which has been formed on the substrate, with an aqueous solution containing HF. The TFT can be produced in a simple manner with safety and with a simple equipment.

REFERENCES:
patent: 5340999 (1994-08-01), Takeda et al.
Abstract of JP 59-213169, Dec. 3, 1984, Patent Abstracts of Japan, vol. 009, No. 081 (E-307) Apr. 10, 1985.
Abstract of JP 61-005578, Jan. 11, 1986, Patent Abstracts of Japan, vol. 010, No. 141 (E-406), May 24, 1986.

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