Amorphous silicon thin film transistor and method of manufacturi

Details Amorphous silicon thin film transistor and method of manufacturi Amorphous silicon thin film transistor and method of manufacturi

1989-03-13

1990-04-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437147, 437170, 437171, 437173, 437101, 357 4, 357 237, 148DIG30, 148DIG34, H01L 2122, H01L 21223, H01L 21326

Patent

active

049160907

ABSTRACT:
A method for manufacturing a amorphous silicon thin film transistor comprises exposing an morphous silicon layer situated between a source electrode and a drain electrode to a gas phase atmosphere having a gas containing an impurity forming an acceptor, then activating said impurity with an electric field or light energy and doping the activated impurity into said amorphous silicon layer. The gas may be a hydrogen compound and it may include an oxidizing gas.

REFERENCES:
patent: 3290569 (1966-12-01), Weimer
patent: 4068020 (1978-01-01), Reuschel
patent: 4459739 (1984-07-01), Shepherd et al.
patent: 4468260 (1984-08-01), Hiramoto
patent: 4565588 (1986-01-01), Seki et al.
patent: 4584028 (1986-04-01), Pankove et al.
patent: 4698104 (1987-10-01), Barker et al.

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