Amorphous silicon thin film transistor

Details Amorphous silicon thin film transistor Amorphous silicon thin film transistor

1990-12-12

1991-09-03

Hille, Rolf

357 2, 357 4, 357 61, 357 91, H01L 2978

Patent

active

050459058

ABSTRACT:
An amorphous silicon thin film transistor includes a gate electrode, an amorphous silicon layer on the gate insulating layer, a drain electrode and a source electrode on the amorphous silicon layer such that a portion of the side of the amorphous silicon layer which faces away from the gate electrode is exposed, and an impurity layer for reducing an off current of the transistor, the impurity layer including an impurity forming an acceptor and which is formed on the exposed portion of the amorphous silicon layer, the amorphous silicon layer being of a first conduction type and the acceptor being of a second different conduction type.

REFERENCES:
patent: 4169740 (1979-10-01), Kalbitzer et al.
patent: 4459739 (1984-07-01), Shepherd et al.
patent: 4720736 (1988-01-01), Takafuji et al.
patent: 4741964 (1988-05-01), Haller

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