Amorphous silicon thin film transistor

Details Amorphous silicon thin film transistor Amorphous silicon thin film transistor

1986-01-22

1988-01-19

Edlow, Martin H.

357 59, 357 2, 357 55, H01L 2978

Patent

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047207361

ABSTRACT:
A thin film transistor includes: a gate electrode formed on an insulating substrate; a first insulating film for covering the gate electrode; a first conducting semiconductor film formed on the first insulating film; a second insulating film for covering the entire top surface of the semiconductor film; a pair of second conducting semiconductor layers formed, spaced from each other, in contact with the side surfaces of the semiconductor film; and first and second electrodes formed in contact with the pair of second conducting semiconductor layers, respectively. Current flows only on the sides of the semiconductor film and through the second conducting semiconductor layers.

REFERENCES:
patent: 4040073 (1977-08-01), Luo
patent: 4425572 (1984-01-01), Takafuji et al.
patent: 4514253 (1985-04-01), Minezaki
patent: 4532536 (1985-07-01), Hatanaka et al.
patent: 4609930 (1986-09-01), Yamazaki
Chenvas-Paule et al., "Self Aligned a-SI:H TFT: A New Way to Design Active-Matrix LCDs", Proc. SID, vol. 26/3.
Patent Abstracts of Japan, 1984, vol. 8, No. 70, English Disclosure of JP No. 58-21869.

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