Amorphous silicon solar cells and a method of producing the same

Details Amorphous silicon solar cells and a method of producing the same Amorphous silicon solar cells and a method of producing the same

1983-08-16

1985-04-16

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136256, 29572, 427 39, 427 74, 204192C, 204192SP, 357 30, H01L 3106, H01L 3118

Patent

active

045117560

ABSTRACT:
Solar cells having a semiconductor body composed of amorphous silicon which is deposited on a substrate coated with aluminum at least on one of its surfaces, with a diffusion barrier layer composed of titanium nitride positioned between the aluminum layer and the semiconductor body. The aluminum layer and the titanium nitride layer can be produced by high frequency sputtering while the semiconductor body can be produced by a glow discharge deposition.

REFERENCES:
Y. Uchida et al., "Conversion Efficiency of Large Area a-Si:H Solar Cell", Conference Proceedings, 15th IEEE Photovoltaic Specialists Conference, Florida, (1981), pp. 922-927.
Marc Wittmer, "TiN and TaN as Diffusion Barriers in Metallizations to Silicon Semiconductor Devices", Appl. Phys. Lett., vol. 36, No. 6, (1980), pp. 456-458.

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