Amorphous silicon solar cell and method for manufacturing the sa

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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437 4, 437108, 437109, H01L 31075, H01L 3118

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active

052483487

ABSTRACT:
A method for preparing an amorphous silicon solar cell is disclosed which comprises forming on a substrate, in the following order, a first electrode, a first conductive film, a thin first substantially intrinsic film, a thicker second substantially intrinsic film, a second conductive film and a second electrode.

REFERENCES:
patent: 4379943 (1983-04-01), Yang et al.
patent: 4471155 (1984-09-01), Mohr et al.
patent: 4690830 (1987-09-01), Dickson et al.
patent: 4968384 (1990-01-01), Asano
patent: 5114498 (1992-05-01), Okamoto et al.
A. Asano et al, J. Appl. Phys., vol. 65, pp. 2439-2444 (1989).
K. Takahashi et al "Amorphous Silicon Solar Cells", J. Wiley and Sons, New York (1986), pp. 114 and 118.
English abstract--JP 63,014,420, Jan. 21, 1988.
English abstract--JP 2,155,225, Jun. 14, 1990.
"Preparation of highly photoconductive hydrogenated amorphous silicon carbide films with a multiplasma-zone apparatus", J. of Applied Physics, (1989) 15 Mar., No. 6, pp. 2439-2444.
"Preparation of a-Si:H films by alternately repeating deposition and hydrogen plasma treatment." Tech. Digest of the Int'l PVSEC-5, Japan, 1990, pp. 63-66.

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