Amorphous silicon semiconductor film and production process ther

Details Amorphous silicon semiconductor film and production process ther Amorphous silicon semiconductor film and production process ther

1986-12-30

1988-02-23

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

357 30J, 357 30K, 357 59C, 357 30, 427 39, 437 2, 437101, H01L 3106, H01L 3118

Patent

active

047268514

ABSTRACT:
This invention discloses an amorphous silicon semiconductor film comprising at least hydrogen, nitrogen, and oxygen as impurities and the method of producing it. The film is characterized in that the total quantity of nitrogen and oxygen in said film is at least 1 atom %. Since the film has a small light absorption coefficient and its optical refractive index is controllable, an excellent window material for solar cell can be provided. As adherence of the film with a metal electrode as well as with a transparent electrode is sufficient, good reproducibility in making solar cells using the film of this invention as window material was realized.

REFERENCES:
patent: 4460670 (1984-06-01), Ogawa et al.
patent: 4471042 (1984-09-01), Komatsu et al.
patent: 4476346 (1984-10-01), Tawada et al.
Yoshida et al, Japanese Journal of Applied Physics, vol. 25, No. 1, Jan. 1986, pp. L7-9.

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