Amorphous silicon semiconductor and process for same

Details Amorphous silicon semiconductor and process for same Amorphous silicon semiconductor and process for same

1984-02-10

1985-10-01

Hearn, Brian E.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, 136258, 427 39, 427 541, 427 74, 427 86, 427 93, C23C 1100, H01L 3118

Patent

active

045444234

ABSTRACT:
A process for preparing an amorphous silicon semiconductor comprising steps of plasma decomposing silicon compounds and carrying out photolysis of the silicon compounds. According to the process, the growth rate of the semiconductor is greatly increased. The obtained amorphous silicon semiconductor has excellent electrical and optical properties and is useful as a photovoltaic element.

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patent: 4410559 (1983-10-01), Hamakawa et al.
patent: 4435445 (1984-03-01), Allred et al.
patent: 4448801 (1984-05-01), Fukuda et al.
patent: 4466992 (1984-08-01), Dreiling
patent: 4481229 (1984-11-01), Suzuki et al.
patent: 4495218 (1985-01-01), Azuma et al

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