Amorphous silicon semiconductor and process for same

Details Amorphous silicon semiconductor and process for same Amorphous silicon semiconductor and process for same

1985-07-03

1987-06-02

Edlow, Martin H.

357 30, 357 58, H01L 4500

Patent

active

046707620

ABSTRACT:
A process for preparing an amorphous silicon semiconductor comprising steps of plasma decomposing silicon compounds and carrying out photolysis of the silicon compounds. According to the process, a growth rate of the semiconductor is greatly increased. The obtained amorphous silicon semiconductor has excellent electrical and optical properties and is useful as a photovoltaic element.

REFERENCES:
patent: 4177474 (1979-12-01), Ovshinsky
patent: 4339470 (1982-07-01), Carlson

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