Amorphous silicon Schottky barrier solar cells incorporating a t

Details Amorphous silicon Schottky barrier solar cells incorporating a t Amorphous silicon Schottky barrier solar cells incorporating a t

1979-03-12

1980-04-29

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

29572, 136 89TF, 357 2, 357 15, 357 30, 427 39, 427 74, H01L 3106

Patent

active

042004730

ABSTRACT:
Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4117506 (1978-09-01), Carlson et al.
patent: 4142195 (1979-02-01), Carlson et al.
D. R. Lamb, "Some Electrical Properties of the Silicon-Silicon Dioxide System," Thin Solid Films, vol. 5, pp. 247-276 (1970).
D. E. Carlson, "The Effects of Impurities & Temperature on Amorphous Silicon Solar Cells," 1977 International Electronics & Devices Meeting, Wash., D.C., pp. 214-217.
A. G. Revesz et al. "Reduction of Radiation Sensitivity in MOS Structures by Aluminum Doping of Silicon Dioxide," J. Electrochem. Soc., vol. 116, pp. 1146-1148 (1969).
J. I. Pankove et al, "Photoluminescence of Hydrogenated Amorphous Silicon," Appl. Phys. Lett., vol. 31, pp. 450-451 (1977).
A. Barna et al. "A Comparative Study of the Structure of Evaporated & Glow Discharge Silicon," Phys. Stat. Sol. (a), vol. 41, pp. 81-84 (1977).

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