Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1992-04-27
1994-12-06
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257 52, 257200, 257607, 257655, H01L 4500, H01L 2948, H01L 29161, H01L 2920
Patent
active
053713826
ABSTRACT:
A rectifying contact for use at high temperatures includes a semiconducting diamond layer and a doped amorphous silicon layer thereon. The amorphous silicon layer may be doped with either a p-type or n-type dopant. The semiconducting diamond may be a doped polycrystalline diamond layer or a natural IIb single crystal diamond. The amorphous silicon layer may be formed by sputter deposition from doped silicon targets. A subsequent heating of the thus formed rectifying contact lowers the forward resistance of the contact by activating additional dopant atoms within the amorphous silicon layer.
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Das Kalyankumar
Thompson Dale G.
Venkatesan Vasudev
Kobe Steel USA Inc.
Prenty Mark V.
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