Amorphous silicon photovoltaic device including a two-layer tran

Details Amorphous silicon photovoltaic device including a two-layer tran Amorphous silicon photovoltaic device including a two-layer tran

1983-11-17

1985-01-01

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136258, 357 30, 357 71, H01L 3106

Patent

active

044916825

ABSTRACT:
An amorphous silicon semiconductor of the general formula: a-Si.sub.(1-x-y) C.sub.x N.sub.y containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when it is used as a P-type or N-type semiconductor in the layer on the light impinging side of the PIN junction photovoltaic device. Also, the conversion efficiency of an amorphous silicon PIN junction photovoltaic device is improved by using a film of ITO and SnO.sub.2 two layer structure as a transparent electrode for the photovoltaic device with the SnO.sub.2 layer contacting the P or N layer, and the improvement is particularly marked in the heterojunction photovoltaic device.

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