Amorphous silicon photovoltaic device having two-layer transpare

Details Amorphous silicon photovoltaic device having two-layer transpare Amorphous silicon photovoltaic device having two-layer transpare

1982-07-19

1984-05-22

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136258, 357 30, H01L 3106

Patent

active

044503164

ABSTRACT:
An amorphous silicon semiconductor of the general formula: a-Si.sub.(1-x-y) C.sub.x N.sub.y containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when it is used as a P-type or N-type layer on the light impinging side of the PIN junction photovoltaic device. Also, the conversion efficiency of an amorphous silicon PIN junction photovoltaic device is improved by using a two-layer film structure of ITO and SnO.sub.2 as a transparent electrode for the photovoltaic device, with the SnO.sub.2 layer contacting the P or N layer. The improvement is particularly marked in the case of heterojunction photovoltaic devices.

REFERENCES:
patent: 4109271 (1978-08-01), Pankove

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