Amorphous silicon photovoltaic device having an insulating layer

Details Amorphous silicon photovoltaic device having an insulating layer Amorphous silicon photovoltaic device having an insulating layer

1977-07-28

1978-09-26

Edlow, Martin H.

357 23, 357 6, H01L 2714

Patent

active

041175069

ABSTRACT:
In a photovoltaic semiconductor device, an electrically insulating layer is between and in contact with a body of amorphous silicon fabricated by a glow discharge in silane and a metallic film of a metal capable of forming a surface barrier junction with the amorphous silicon body. The insulating layer is of such a relatively thin thickness that charge carriers are capable of tunneling through the insulating layer. The insulating layer has been found to increase the open circuit voltage of the photovoltaic device without adversely affecting the short circuit current density of the device.

REFERENCES:
patent: 3577047 (1971-05-01), Cheroff
patent: 3631308 (1971-12-01), Krolkowski
patent: 3916268 (1975-10-01), Engeler
patent: 4064521 (1977-12-01), Carlson
patent: 4070206 (1978-01-01), Kressel

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