Amorphous silicon photosensor with oxygen doped layer

Details Amorphous silicon photosensor with oxygen doped layer Amorphous silicon photosensor with oxygen doped layer

1989-09-25

1990-11-06

Mintel, William

357 2, 357 67, 357 71, 357 59, 357 31, 357 63, H01L 2714

Patent

active

049690256

ABSTRACT:
A sandwich type amorphous silicon photosensor suitable for use as an image sensor of a facsimile machine or the like is provided. The photosensor includes a pair of first and second electrodes and an amorphous silicon multi-layer structure sandwiched between the first and second electrodes. The first electrode includes an oxide and has a transparency of 80% or more in a visible light region. The multi-layer structure includes a first amorphous silicon layer which is in contact with the first electrode. The first amorphous silicon layer contains at least oxygen and has an optical bandgap in a region of 2.0 eV or more, a resistivity in a range of 10.sup.12 -10.sup.14 ohms-cm, a photoconductive characteristic and a refractive index in a range of 1.8-3.4

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Sequeda, "The Role of Thin Film Materials on the Technology of Integrated Circuit Fabrication," Journal of Metals, Nov. 85, 54-59.

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