Amorphous silicon photosensor of layers having differing conduct

Details Amorphous silicon photosensor of layers having differing conduct Amorphous silicon photosensor of layers having differing conduct

1984-03-07

1987-04-14

Larkins, William D.

357 2, 357 58, 357 59, H01L 2714

Patent

active

046582800

ABSTRACT:
A photosensor comprises a first layer, a second layer and a third layer laminated successively, each layer comprising amorphous silicon and the third layer having at least a pair of electrodes separated from each other at a given interval, characterized in that said second layer has p-type semiconductor characteristics, said first layer and said third layer have semiconductor characteristics of a conduction type different from that of said second layer, and at least said first layer has photoconductivity.

REFERENCES:
patent: 4254429 (1981-03-01), Yamazaki
patent: 4271328 (1981-06-01), Hamakawa et al.
patent: 4459163 (1984-07-01), Mac Diarmid et al.
patent: 4460669 (1984-07-01), Ogawa et al.
patent: 4471155 (1984-09-01), Mohr et al.
patent: 4490454 (1984-12-01), Misumi et al.

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