Amorphous silicon photosensor

Details Amorphous silicon photosensor Amorphous silicon photosensor

1988-11-14

1991-10-22

Hille, Rolf

357 2, 357 4, H01L 2714, H01L 3100

Patent

active

050600419

ABSTRACT:
An amorphous silicon photosensor comprising a substrate, a lower electrode formed on the substrate, an amorphous silicon photoelectric conversion layer formed on the lower electrode, and an upper electrode formed on the amorphous silicon photoelectric conversion layer, wherein the substrate is transparent to the incident light for photosensing, the lower electrode and the upper electrode comprises at least one of an electroconductive oxide or an electroconductive nitride, both of the electrodes for receiving the incident light for photosensing being transparent to the incident light, and the amorphous silicon photoelectric conversion layer comprises a plurality of amorphous silicon layers, and at least one of the amorphous silicon layers in contact with the electroconductive oxide or the electroconductive nitride comprises at least one of the same atoms as the constituent atoms of the electroconductive oxide or the electroconductive nitride.

REFERENCES:
patent: 4396793 (1983-08-01), Madan
patent: 4799968 (1989-01-01), Watanabe et al.
patent: 4820915 (1989-04-01), Hamakawa et al.
patent: 4855795 (1989-08-01), Yamamoto et al.
patent: 4892594 (1990-01-01), Fujiwara et al.
patent: 4907052 (1990-03-01), Takada et al.
"Design Parameters . . . Cells", Okamoto et al., Applied Physics, vol. 19 (1980), pp. 545-550.

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