Amorphous silicon photoreceptor with nitrogen and boron

Details Amorphous silicon photoreceptor with nitrogen and boron Amorphous silicon photoreceptor with nitrogen and boron

1984-02-14

1985-07-30

Martin, Roland E.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

430 57, 430 95, 430128, 427 39, 427 74, 2525011, 357 2, G03G 1322, G03G 5082, G03G 509

Patent

active

045321965

ABSTRACT:
A photoreceptor of electrophotography having, on a substrate, an amorphous silicon (a-Si) layer formed by relying on plasma CVD technique, wherein the a-Si layer is formed in the presence of silane, diborane and nitrogen, and possibly phosphine as required. This a-Si layer may have a multiple layer structure comprising a thin a-Si layer formed in the presence of silane and diborane or nitrogen, and a principal a-Si layer formed in the presence of silane, diborane and nitrogen, and possibly phosphine as required, but in such instance the amount of phosphine which is added is less than three times that of diborane. Such photoreceptor has a good sensitivity to light rays, has long service life, and is not harmful to human body.

REFERENCES:
patent: 4225222 (1980-09-01), Kempter
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4253882 (1981-03-01), Dalal
patent: 4265991 (1981-05-01), Hirai et al.
patent: 4349617 (1982-09-01), Kawashiri et al.
patent: 4356246 (1982-10-01), Tabei et al.

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