Amorphous silicon photoreceptor for electrophotography

Details Amorphous silicon photoreceptor for electrophotography Amorphous silicon photoreceptor for electrophotography

1987-11-22

1989-02-14

Martin, Roland E.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 56, 430 84, 430 95, G03G 5082

Patent

active

048046086

ABSTRACT:
A photoreceptor for electrophotography which comprises an electroconductive substrate and a photoconductive layer formed thereon, said photoconductive layer essentially consisting of a thin film of amorphous silicon alloy containing at least one of hydrogen and fluorine and having the formula: a-Si.sub.1-m X.sub.m :Y wherein X is C, N or O, Y is at least one of H and F and m is a number of not less than zero and less than one, m being gradually decreased from the top surface of the photoconductive layer to the middle part of the photoconductive layer and gradually increased from the middle part of the photoconductive layer to the interface of the photoconductive layer with the electroconductive substrate in the direction of thickness, said photoreceptor having good electric charging property and photoconductivity characteristics.

REFERENCES:
patent: 4210710 (1980-07-01), Boxby
patent: 4414319 (1983-11-01), Shirai et al.
patent: 4460669 (1984-07-01), Ogawa et al.
patent: 4490453 (1984-12-01), Shirai et al.

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