Amorphous silicon photoreceptor

Details Amorphous silicon photoreceptor Amorphous silicon photoreceptor

1984-10-10

1990-07-24

Martin, Roland E.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 57, 430 67, G03G 514, G03G 5082

Patent

active

049435035

ABSTRACT:
An amorphous silicon (a-Si) photoreceptor includes an amorphous silicon (a-Si) photoconductive layer, and a surface layer disposed above the amorphous silicon (a-Si) photoconductive layer. An intermediate layer is disposed between the amorphous-silicon (a-Si) photoconductive layer and the surface layer to ensure the energy level matching. The intermediate layer is made of amorphous silicon (a-Si) doped with nitrogen and boron so as to have the energy difference of less than 0.2 eV between the bottom of the conduction bands of the surface layer and the intermediate layer.

REFERENCES:
patent: 4418132 (1983-11-01), Yamazaki
patent: 4460669 (1984-07-01), Ogawa et al.
patent: 4460670 (1984-07-01), Ogawa et al.

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