Amorphous silicon photodiode with sloped sidewalls and method of

Details Amorphous silicon photodiode with sloped sidewalls and method of Amorphous silicon photodiode with sloped sidewalls and method of

1991-10-28

1993-03-02

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

2502141, 257 53, 257 79, 257 88, 257 99, H01L 4500, H01L 2714, H01J 4014

Patent

active

051913941

ABSTRACT:
Solid state photodetectors having amorphous silicon photodiode bodies with sloped sidewalls allowing for deposition of high integrity conformal layers thereover are produced by etching the amorphous silicon in a mostly anisotropic etchant in a reactive ion etcher in which the pressure of the etchant is controlled. A photoresist mask having sloped sidewalls is formed over the amorphous silicon to be etched and the pressure of the etchant is selected to produce the desired slope of the sidewall in the photodetector body; at lower pressures a smaller slope is produced in the silicon and at higher pressures a steeper slope is produced in the silicon.

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"Dry Etching of Tapered Contact Holes Using Multilayer Resist", R. J. Saia and B. Gorowitz, 132 J. Electrochem Soc., 1954-57, Aug., 1985.

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