Amorphous silicon photoconductive member with reduced spin densi

Details Amorphous silicon photoconductive member with reduced spin densi Amorphous silicon photoconductive member with reduced spin densi

1985-12-30

1987-04-28

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 62, 430 66, 430 84, 430 95, G03G 514

Patent

active

046614273

ABSTRACT:
A photoconductive member, having a support and a photoconductive light receiving layer comprising a matrix of silicon atoms containing at least one of hydrogen atoms and halogen atoms provided on said support, said light receiving layer having a layer region with a layer thickness of at least 20 .ANG. from the side of the free surface, in which the spin density measured by Electron Spin Resonance is 1.0.times.10.sup.20 spins/cm.sup.3 or less.

REFERENCES:
patent: 4460669 (1984-07-01), Ogawa et al.
patent: 4490454 (1984-12-01), Misumi et al.

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