Amorphous silicon photo sensor with blocking diode

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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357 2, 357 30, H01L 3100

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active

048271179

ABSTRACT:
An image sensor array comprises an insulating substrate, a plurality of individual electrodes formed on the substrate, a plurality of blocking diodes formed on the respective individual electrodes, a plurality of photo diodes formed on the blocking diodes to form a plurality of series conections of a blocking diode and a photo diode, a plural number of common electrodes of a transparent conductor material, each of the common electrodes covering one of the photo diodes on the same individual electrodes, and a filter covering portions of the common electrodes above the photo diodes. A photo-shielding layer of metal, amorphous silicon, amorphous germanium or amorphous silicon germanium may be interposed between the blocking diode and the photo diode.

REFERENCES:
patent: 4405857 (1983-09-01), Hirai et al.
patent: 4499384 (1985-02-01), Segawa et al.
patent: 4542409 (1985-09-01), Ochi
patent: 4556800 (1985-12-01), Otha et al.
patent: 4565928 (1986-01-01), Yamamoto et al.
patent: 4584607 (1986-04-01), Miyazawa
Yamamoto et al., High Speed Contact Type Linear Sensor Array Using a-Si pin Diodes, Extended Absts. of the 15th Conf. on Solid State Devices & Materials, 1983, pp. 205-208.

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