Amorphous silicon photo-sensor for a contact type image sensor

Details Amorphous silicon photo-sensor for a contact type image sensor Amorphous silicon photo-sensor for a contact type image sensor

1987-01-23

1987-10-06

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

357 2, 357 30, H01J 4014

Patent

active

046984950

ABSTRACT:
The contact type image sensor includes a transparent insulator substrate, a common electrode formed on a main surface of the insulator substrate, an amorphous silicon layer formed on the common electrode, a plurality of individual electrodes formed on the amorphous silicon layer, an insulator layer covering the amorphous silicon layer and having openings at the portions of the individual electrodes, and a plurality of wiring layers formed on the insulator layer for leading out the output signal in response to the light introduced from a back surface of the insulator substrate. A photo-shield layer may be interposed between the common electrode and the amorphous silicon layer.

REFERENCES:
patent: 3681765 (1972-08-01), Chapman
patent: 3792258 (1974-02-01), Sliker
patent: 3988613 (1976-10-01), Brown et al.
patent: 4453184 (1984-06-01), Hamakawa et al.
patent: 4471228 (1984-09-01), Nishizawa et al.
patent: 4499384 (1985-02-01), Segawa et al.
patent: 4565928 (1986-01-01), Yamamoto et al.

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