Amorphous silicon on insulator VLSI circuit structures

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

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257 72, 257347, 257349, 257354, H01L 2904

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active

057420750

ABSTRACT:
An integrated thin film transistor on insulator circuit made up of a number of thin film transistors formed with small feature size and densely packed so as to allow interconnection as a complex circuit. An insulating substrate, preferably flexible, serves as the support layer for the integrated circuit. Control gate metallization is carried on the insulating substrate, a dielectric layer is deposited over the control gate, and an amorphous silicon layer with doped source and drain regions deposited on the dielectric layer. Trenches are formed to remove the amorphous silicon material between transistors to allow highly dense circuit packing. An upper interconnect level which forms connections to the source and drain and gate regions of the thin film transistors, also interconnects the transistors to form more complex circuit structures. Due to the dense packing of the transistors allowed by the trench isolation, the interconnecting foils can be relatively short, increasing the speed of the circuit.

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"Hydrogenated Amorphous Silicon Thin-Film Transistor-Based Circuit Development For Use In Large Memories", by Stanley G. Burns et al., AMLCD Symposium, Lehigh University, Bethlemen, PA (Oct. 1993).
"Properties of the Interface Between Amorphous Silicon and Nitride", by Tsai et al., Mat. Res. Soc. Symp. Proc. vol. 70, pp. 351-359, 1986.
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