Amorphous silicon MIS device

Details Amorphous silicon MIS device Amorphous silicon MIS device

1979-12-03

1981-09-22

Edlow, Martin H.

357 15, 357 30, 357 6, H01L 4500

Patent

active

042913187

ABSTRACT:
The present invention relates to an amorphous silicon MIS device having an insulating oxide formed by the chemical oxidation of the silicon surface. A process comprising etching the silicon surface followed by a treatment of the etched surface in a sulfur based oxidant forms a controlled thickness oxide layer, useful in modifying the junction forming characteristics of the semiconductor and additionally stabilizing the semiconductor properties of the photoconductive amorphous silicon.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4117506 (1978-09-01), Carlson
patent: 4142195 (1979-02-01), Carlson et al.
patent: 4163677 (1979-08-01), Carlson
patent: 4166919 (1979-09-01), Carlson
patent: 4196438 (1980-04-01), Carlson
patent: 4200473 (1980-04-01), Carlson

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