Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1998-02-25
2000-06-27
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 63, 257 77, 257440, 438 87, 438 96, 2525011, 136249, 136258, H01L 2904
Patent
active
060809981
ABSTRACT:
An amorphous silicon germanium thin film is disclosed which contains hydrogen and germanium in concentrations of 5-10 atomic percent and 40-55 atomic percent, respectively for exhibiting the optical gap in the range of 1.30-1.40 eV. Also disclosed is a photovoltaic element incorporating the amorphous silicon germanium thin film.
REFERENCES:
patent: 5084777 (1992-01-01), Slobodin
A. Terakawa et al.; Optimization of a-SiGe:H Alloy Composition for Stable Solar Cells; Jpn. J. Appl. Phys. vol. 34 (1995), Part 1, No. 4A, Apr. 1995, pp. 1741-1747.
Y. Hishikawa et al.; Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films; Japanese Journal of Applied Physics, vol. 30, No. 5, May 1991, pp. 1008-1014.
L. Yang et al.; The Effect of Hydrogen Dilution on the Deposition of Sige alloys and the Device Stability: Mat. Res. Soc. Symp. Proc. vol. 219, .COPYRGT.1991 Materials Research society, pp. 259-264.
Isomura Masao
Kinoshita Toshihiro
Shima Masaki
Fasse W. F.
Fasse W. G.
Martin-Wallace Valencia
Sanyo Electric Co,. Ltd.
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