Amorphous silicon germanium film and semiconductor device using

Details Amorphous silicon germanium film and semiconductor device using Amorphous silicon germanium film and semiconductor device using

1994-11-21

1997-04-01

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 57, 257 55, 257 63, H01L 2904, H01L 31036, H01L 310376, H01L 3120

Patent

active

056169329

ABSTRACT:
The content of bonding hydrogen in an a - SiGe film is so adjusted that in a case where the content of bonding hydrogen per Si atom in the film is in the range of approximately 8 to 14 at. %, [SiH.sub.2 ]/[Si] and [SiH]/[Si] are respectively in the ranges of approximately 0.5 to 4 at. % and approximately 7 to 10 at. %, and both [SiH.sub.2 ]/[Si] and [SiH]/[Si] increase at approximately equal slops as the content of bonding hydrogen increases.

REFERENCES:
patent: 4532198 (1985-07-01), Saitoh et al.
patent: 4799968 (1989-01-01), Watanabe et al.
patent: 4910153 (1990-03-01), Dickson
patent: 5371380 (1994-12-01), Saito et al.
Technical Digest, 7th International Photovoltaic Science and Engineering Conference, Nov. 22-26, 1993, Nagoya, Japan, 4 pages (including cover page; page of table of contents; and pp. 273-274).

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