Amorphous silicon film, its production and photo semiconductor d

Details Amorphous silicon film, its production and photo semiconductor d Amorphous silicon film, its production and photo semiconductor d

1992-07-23

1994-01-11

Turner, A. A.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

428446, 430 60, 430 65, 430 84, 257 2, H01L 4500, B05D 512

Patent

active

052780155

ABSTRACT:
An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.

REFERENCES:
patent: 4409311 (1983-10-01), Kawamura et al.
patent: 5152833 (1992-10-01), Iwamoto et al.

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