Amorphous silicon film, its production and photo semiconductor d

Details Amorphous silicon film, its production and photo semiconductor d Amorphous silicon film, its production and photo semiconductor d

1990-08-29

1992-10-06

Robinson, Ellis P.

Compositions: coating or plastic

Coating or plastic compositions

Inorganic materials only containing at least one metal atom

357 2, 428446, 430 63, C01B 600, C01B 3300

Patent

active

051528339

ABSTRACT:
An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.

REFERENCES:
patent: 4365013 (1982-12-01), Ishioka et al.
patent: 4409311 (1983-10-01), Kawamura et al.
patent: 4419604 (1983-12-01), Ishioka et al.
patent: 4581113 (1986-04-01), Morimoto et al.
patent: 4681826 (1987-07-01), Fukatsu et al.
patent: 4683186 (1987-07-01), Ohashi et al.
patent: 4786572 (1988-11-01), Haku et al.
patent: 4922218 (1990-05-01), Watanabe et al.

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