Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1984-05-04
1987-01-06
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118723, 118 501, C23C 1308
Patent
active
046338098
ABSTRACT:
An amorphous silicon film forming apparatus forms an amorphous silicon film on a substrate. The apparatus is provided with a sealed vessel whose inside space is defined as a reaction chamber. A gas inlet pipe for introducing a gas containing SiH4 into the reaction chamber is connected to the vessel. A facing electrode provided in the reaction chamber and a power source connected to the facing electrode convert in a plasma generating region the gas introduced into the reaction chamber by the gas inlet pipe into plasma. A conductive mesh structure is disposed in the reaction chamber so as to surround the plasma generating region.
REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4173661 (1979-11-01), Bourdon
patent: 4225222 (1980-09-01), Kempter et al.
patent: 4298443 (1981-11-01), Maydan
patent: 4317844 (1982-02-01), Carlson
patent: 4379943 (1983-04-01), Yang et al.
patent: 4400410 (1983-08-01), Green et al.
patent: 4404076 (1983-09-01), Nakagawa et al.
patent: 4418645 (1983-12-01), Knights et al.
patent: 4438188 (1984-03-01), Shimatani et al.
patent: 4450787 (1984-05-01), Weakliem et al.
patent: 4461239 (1984-07-01), Cannella et al.
patent: 4478173 (1984-10-01), Doehler
Page 216 of Encyclopedia Chimica.
Hirose Masataka
Suzuki Katsumi
Ueno Tsuyoshi
Bueker Richard
Kabushiki Kaisha Toshiba
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