Amorphous silicon deposition for sequential lateral...

Details Amorphous silicon deposition for sequential lateral... Amorphous silicon deposition for sequential lateral...

2007-03-20

2007-03-20

Chen, Bret (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

C427S555000, C427S376100

Reexamination Certificate

active

10157199

ABSTRACT:
An amorphous silicon deposition method includes the step of forming a buffer layer on a transparent substrate; depositing amorphous silicon on the buffer layer by a thickness ranging from 600 to 2,000 angstroms; repeatedly irradiating the amorphous silicon layer to completely melt using a laser beam that has a complete melting energy density; and moving the laser beam by a transaction distance for the next laser beam irradiation.

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Article—Y.H. Jung, et al., “Low Temperature Poly-Si TFTs Fabricated with Directionally Crystallized Si Film”.

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