Amorphous silicon carbide method

Details Amorphous silicon carbide method Amorphous silicon carbide method

1982-01-07

1984-10-23

Weisstuch, Aaron

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

136258, 423346, 427 74, 427 86, 427 95, 427249, 357 2, 357 30, 357 17, 420903, H01L 21205

Patent

active

044786549

ABSTRACT:
Preparation of amorphous semiconductor carbides that are suitable for use in a wide variety of devices by the pyrolytic decomposition of a mixture of one or more semiconductanes and one or more carbanes.

REFERENCES:
patent: 3520740 (1970-07-01), Addamiano
patent: 4109271 (1978-08-01), Pankove
patent: 4239554 (1980-12-01), Yamazaki
patent: 4329699 (1982-05-01), Ishihara et al.
patent: 4357179 (1982-11-01), Adams et al.
patent: 4363828 (1982-12-01), Brodsky et al.
S. C. Gau et al., "Preparation of Amorphous Silicon Films by Chemical Vapor Deposition from Higher Silanes Si.sub.n H.sub.2n+2 (n>1)", Appl. Phys. Lett., vol. 39, pp. 436-438 (1981).
R. M. Plecenik et al., "Preparation of Amorphous Silicon by Chemical Vapor Deposition," IBM Tech. Disc. Bull., vol. 24, pp. 1523-1524, (Aug. 1981).

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