Amorphous silicon carbide film and photovoltaic device using the

Details Amorphous silicon carbide film and photovoltaic device using the Amorphous silicon carbide film and photovoltaic device using the

1996-03-21

1997-12-23

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

252 623, 2525011, 252504, 136258, 257 55, 257 63, 257 77, 257440, 257458, H01L 31075, H01L 310376

Patent

active

057004676

ABSTRACT:
In the present invention, the optical band gap Eg (eV) of an amorphous silicon carbide film has the following relationship with the content of hydrogen C.sub.H (at. %) and the content of carbon C.sub.C (at. %) in the film:

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patent: 5358755 (1994-10-01), Li et al.
patent: 5362684 (1994-11-01), Saito et al.
patent: 5419783 (1995-05-01), Noguchi et al.
R.E. Hollingsworth et al, Conference Record, 19th IEEE Photovoltaic Specialists Conf. (1987), pp. 684-688.
Japanese Journal of Applied Physics, vol. 30, No. 5, May 1991, pp. 1008-1014, "Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films", Hishikawa et al.
J. Applied Physics, vol. 60, No. 11, Dec. 1, 1986, pp. 4025-4027, "Preparation of highly photosensitive hydrogenated amorphous Si-C alloys from a glow-discharge plasma", Matsuda et al.

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