Amorphous silicon-based photovoltaic semiconductor materials fre

Details Amorphous silicon-based photovoltaic semiconductor materials fre Amorphous silicon-based photovoltaic semiconductor materials fre

1991-12-03

1993-09-07

Weisstuch, Aaaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

2525011, 252 623V, 423324, 423508, 423511, 427574, 427583, 427588, 427 76, 437 4, 437101, 437106, 428620, 428428, 257 55, 257 56, 257458, H01L 310376, H01L 310392, H01L 31075, H01L 310272

Patent

active

052425053

ABSTRACT:
Alloys of amorphous silicon with Group VIa elements are disclosed that form high-quality materials for photovoltaic cells that are resistant to Staebler-Wronski photodegradation. Also disclosed are methods for manufacturing the alloys. The alloys can be formed as films on solid-state substrates by reacting silane gas and at least one alloying gas (H.sub.2 M, wherein M is an element from Group VIa of the periodic table), preferably with hydrogen dilution, by a glow-discharge method such as plasma-enhanced chemical vapor deposition. The alloys can have an optical bandgap energy from about 1.0 eV to about 2.3 eV, as determined by selecting one or more different Group VIa elements for alloying or by changing the concentration(s) of the alloying element(s) in the alloy. The alloys exhibit excellent light-to-dark conductivity ratios, excellent structural quality, and resistance to Staebler-Wronski degradation. They can be used as "i" type or doped for use as "p" or "n" type materials.

REFERENCES:
E. Holzenkampfer et al, Proceedings, 4th E. C. Photovoltaic Solar Energy Conference (1982), pp. 778-782.
A. Morimoto et al, Jap. J. Appl. Phys., vol. 26, pp. 22-27 (1987) (Jan. ).
Staebler and Wronski, "Reversible Conductivity Changes in Discharge-Produced Amorphous Si," Appl. Phys. Lett. 4:292-294 (1977) (August).
Lin et al., "New Hydrogenated Amorphous Silicon Alloys," Appl. Phys., Lett. 57:300-301 (1990) (July).
Lin, et al., "Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon-Selenium Alloy Films," J. Non-Cryst. Solids 127:186-190 (1991).
Lin et al., "The Electrical and Optical Properties of Amorphous Silicon Alloys by Plasma-Enhanced CVD Method," Mat. Res. Soc. Symp. Proc. 165:167-172 (1990).
He et al., "Amorphous Silicon Selenium Alloy Film Deposited Under Hydrogen Dilution," Mat. Res. Soc. Symp. Proc. 219:727-732. (1991).

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