Amorphous silicon-amorphous silicon carbide photovoltaic device

Details Amorphous silicon-amorphous silicon carbide photovoltaic device Amorphous silicon-amorphous silicon carbide photovoltaic device

1977-05-27

1978-08-22

Edlow, Martin H.

357 16, 357 58, H01L 2714

Patent

active

041092716

ABSTRACT:
A layer of amorphous silicon-carbide prepared by a glow discharge in a mixture of silane, hydrocarbon and doping gases is at the solar radiation incident surface of a photovoltaic device. The photovoltaic device includes first and second contiguous layers of amorphous silicon fabricated by a glow discharge in silane. The amorphous silicon carbide layer is contiguous to the second layer and opposite the first layer. The amorphous silicon carbide layer is substantially transparent to solar radiation and highly conductive, providing increased solar radiation collection efficiency and reduced internal resistance.

REFERENCES:
patent: 3982262 (1976-09-01), Karatsjuba
patent: 4064521 (1977-12-01), Carlson

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