Amorphous SI/SIC heterojunction color-sensitive phototransistor

Details Amorphous SI/SIC heterojunction color-sensitive phototransistor Amorphous SI/SIC heterojunction color-sensitive phototransistor

1988-11-16

1994-05-10

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257 53, 257 55, 257 63, 257 77, 257187, 257587, 257591, H01L 29161, H01L 29205, H01L 29225

Patent

active

053110471

ABSTRACT:
An amorphous Si/SiC heterojunction color-sensitive phototransistor was successfully fabricated by plasma-enhanced chemical vapor deposition. The structure is glass/ITO/a-Si(n.sup.+ -i-p.sup.+)/a-SiC(i-n.sup.+)/Al. The device is a bulk barrier transistor with a wide-bandgap amorphous SiC emitter. The phototransistor revealed a very high optical gain of 40 and a response speed of 10 us at an input light power of 5 uW and a collector current of 0.12 mA at a voltage of 14 V. The peak response occurs at 610 nm under 1 V bias and changes to 420 and 540 nm under 7- and 13-V biases, respectively.

REFERENCES:
patent: 4385200 (1983-05-01), Hamakawa et al.
patent: 4600935 (1986-07-01), Dresner
patent: 4633287 (1986-12-01), Yamazaki
patent: 4665428 (1987-03-01), Hockley et al.
patent: 4728997 (1988-03-01), Szydlo et al.
patent: 4736234 (1988-04-01), Boulitrop et al.
patent: 4820915 (1989-04-01), Hamakawa et al.
patent: 4847215 (1989-07-01), Hanaki et al.

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