Amorphous semiconductors equivalent to crystalline semiconductor

Details Amorphous semiconductors equivalent to crystalline semiconductor Amorphous semiconductors equivalent to crystalline semiconductor

1978-03-08

1980-08-12

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

148 15, 204192S, 357 2, 427 74, 427 76, 427 83, 427 84, 427 85, 427 86, 427 531, 427 42, 4272481, H01L 4500

Patent

active

042173744

ABSTRACT:
A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises forming an amorphous semiconductor film, preferably by vaporizing silicon or the like in an evacuated space and condensing the same on a substrate in such space, and preferably at the same time, introducing at least two or three compensating or altering agents into the film, like activated hydrogen and fluorine, in amounts which substantially reduce or eliminate the localized states in the energy gap thereof so that greatly increased diffusion lengths for solar cell applications is obtained and dopants can be effectively added to produce p or n amorphous semiconductor films so that the films function like similar crystalline materials.

REFERENCES:
patent: 3949119 (1976-04-01), Shewchun et al.
patent: 4047976 (1977-09-01), Bledsoe et al.
patent: 4064521 (1977-12-01), Carlson
patent: 4066527 (1978-01-01), Takagi et al.
patent: 4068020 (1978-01-01), Reuschel
patent: 4113514 (1978-09-01), Pankove et al.
Brodsky et al., "Doping of Sputtered Amorphous Semiconductors," IBM Tech. Dis. Bulletin, vol. 19, No. 12, May 1977.
Malhotra et al., "Effects of Hydrogen Contamination on the Localized States in Amorphous Silicon," Applied Physics Lett. 28, No. 1, Jan. 1976.
Widmer, "Epitaxial Growth of Si on Si in Ultra High Vacuum," Applied Physics Letters, 5, No. 5, Sep. 1, 1964.
Choo et al., "Hydrogen States in Amorphous Ge," Solid State Communications, 25, pp. 385-387, 1978.

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