Patent
1982-09-29
1984-11-27
Edlow, Martin H.
357 4, 357 30, 357 15, H01L 4500
Patent
active
044853890
ABSTRACT:
An amorphous semiconductor body, preferably a silicon-containing vapor deposited film, is provided containing at least fluorine as a compensating or altering and also an alloying agent, and most preferably at least one complementary compensating or altering agent, which reduce the localized defect states in the energy gap of the amorphous semiconductor material to a degree which either one alone could not achieve. As a result, the amorphous semiconductor body provides a higher photoconductivity, wider depletion width, more efficient charge carrier collection, longer carrier lifetime, and lower dark intrinsic electrical conductivity, where desired, and can be more easily modified to shift the Fermi level to provide very efficient n type extrinsic electrical conductivity and the like than prior amorphous semiconductor bodies.
REFERENCES:
patent: 3928866 (1975-12-01), Digoy
patent: 4064521 (1977-12-01), Carlson
patent: 4066527 (1978-01-01), Takogi
patent: 4068020 (1978-01-01), Reuschel
patent: 4177473 (1979-12-01), Ovshinsky
patent: 4177474 (1979-12-01), Ovshinsky
patent: 4196438 (1980-04-01), Carlson
Brodsky et al., I.B.M. Tech. Discl. Bull., vol. 19, No. 12, May 1977.
Malhotra et al., Appl. Phys. Lett., vol. 28, No. 1, Jan. 1, 1976, pp. 47-48.
Izu Masatsugu
Ovshinsky Stanford R.
Edlow Martin H.
Energy Conversion Devices Inc.
Norris Lawrence G.
LandOfFree
Amorphous semiconductors equivalent to crystalline semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Amorphous semiconductors equivalent to crystalline semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Amorphous semiconductors equivalent to crystalline semiconductor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2136828