Amorphous semiconductors equivalent to crystalline semiconductor

Details Amorphous semiconductors equivalent to crystalline semiconductor Amorphous semiconductors equivalent to crystalline semiconductor

1984-11-07

1986-08-12

Edlow, Martin H.

357 4, H01L 4500

Patent

active

046059415

ABSTRACT:
An amorphous semiconductor body, preferably a silicon-containing vapor deposited film, is provided containing at least fluorine as a compensating or altering and also an alloying agent, and most preferably at least one complementary compensating or altering agent, which reduce the localized defect states in the energy gap of the amorphous semiconductor material to a degree which either one alone could not achieve. As a result, the amorphous semiconductor body provides a higher photoconductivity, wider depletion width, more efficient change carrier collection, longer carrier lifetime, and lower dark intrinsic electrical conductivity, where desired, and can be more easily modified to shift the Fermi level to provide very efficient n type extrinsic electrical conductivity and the like than prior amorphous semiconductor bodies.

REFERENCES:
patent: 4485389 (1984-11-01), Ovskinsky

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