Amorphous semiconductors equivalent to crystalline semiconductor

Details Amorphous semiconductors equivalent to crystalline semiconductor Amorphous semiconductors equivalent to crystalline semiconductor

1983-10-07

1985-05-28

Edlow, Martin H.

357 30, 357 16, 357 59, H01L 4500

Patent

active

045203806

ABSTRACT:
An amorphous semiconductor body, most advantageously a glow discharge deposited silicon-containing host matrix film, is provided containing at least fluorine as a compensating or altering agent, and most preferably at least one complementary compensating or altering agent, such as hydrogen, both of which reduce the localized defect states in the energy gap of the amorphous semiconductor material to a degree which either one alone could not achieve. The silicon and/or other elements of the host matrix film are deposited by the glow discharge decomposition of gaseous compounds preferably with fluorine as one element of a compound, the hydrogen and other compensating and altering material being preferably a molecular gas or an element of a compound of silicon or other host matrix element.

REFERENCES:
patent: 4409605 (1983-10-01), Ovshinsky

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