Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-03-31
1997-08-12
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257 98, 257 99, 257103, H01L 2904
Patent
active
056568231
ABSTRACT:
An amorphous semiconductor thin film light emitting diode comprising of a first electrode metal sheet substrate, amorphous semiconductor layers and a second optically transparent electrode. The first electrode metal sheet substrate acts as the support of the electrode and provides ruggedness, good thermal stability and dissipation of heat, good reflectance and flexibility. The device may further include electrically insulating layers which cause a pattern of light to be emitted by the diode, by controlling the passage of current through areas of the amorphous semiconductor layers.
REFERENCES:
patent: 4766471 (1988-08-01), Ovshinsky et al.
patent: 5220183 (1993-06-01), Taniguchi et al.
Chulalongkorn University
Economou Vangelis
Tran Minhloan
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